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BD141 NPN Transistor

BD141 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD141 .
Excellent Safe Operating Area. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Collector-Emitter Saturation Voltage- : VCE(sa.

BD141 Applications

* Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Coll

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Datasheet Details

Part number
BD141
Manufacturer
INCHANGE
File Size
190.60 KB
Datasheet
BD141-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BD141-like datasheet