BD141 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD141 .
Excellent Safe Operating Area. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Collector-Emitter Saturation Voltage- : VCE(sa.

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Datasheet Specifications

Part number: BD141
Manufacturer: INCHANGE
File Size: 190.60 KB
Datasheet: BD141-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Coll

BD141 Distributors

📁 Related Datasheet

BD140 BD140-10 BD14000EFV-C BD140G BD142 BD1482EFJ

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BD141 NPN Transistor INCHANGE

INCHANGE BD141-like datasheet