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BD132 PNP Transistor

BD132 Description

isc Silicon PNP Power Transistor ESCRIPTION *DC Current Gain- : hFE= 40(Min)@ IC= -0.5A *Collector-Emitter Breakdown Voltage - : V(BR)CEO= -4.

BD132 Applications

* Designed for medium power and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICM Collecto

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Datasheet Details

Part number
BD132
Manufacturer
INCHANGE
File Size
204.82 KB
Datasheet
BD132-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE BD132-like datasheet