BD112 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD112 .
Excellent Safe Operating Area. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Collector-Emitter Saturation Voltage- : VCE(sat.

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Datasheet Specifications

Part number: BD112
Manufacturer: INCHANGE
File Size: 175.78 KB
Datasheet: BD112-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Colle

BD112 Distributors

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BD112 NPN Transistor INCHANGE

INCHANGE BD112-like datasheet