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BD116 NPN Transistor

BD116 Description

isc Silicon NPN Power Transistor INCHA .
Excellent Safe Operating Area. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Collector-Emitter Saturation Voltage- : VCE(sat.

BD116 Applications

* Designed for RF power and general-purpose audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM C

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Datasheet Details

Part number
BD116
Manufacturer
INCHANGE
File Size
175.17 KB
Datasheet
BD116-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BD116-like datasheet