BD131 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD131 .
DC Current Gain- : hFE= 40(Min)@ IC= 0. Collector-Emitter Breakdown Voltage - : V(BR)CEO= 45V(Min. Complement to type BD132. Min.

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Datasheet Specifications

Part number: BD131
Manufacturer: INCHANGE
File Size: 203.77 KB
Datasheet: BD131-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for medium power and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IBM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-

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BD131 NPN Transistor INCHANGE

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