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BD138 - PNP Transistor

Description

DC Current Gain- : hFE= 40(Min)@ IC= -0.15A Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -60V(Min) Complement to type BD137 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as audio amplifiers and driver

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isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -60V(Min) ·Complement to type BD137 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range -60 V -60 V -5 V -1.5 A -0.5 A 1.25 W 12.
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