BD138 - Silicon PNP Transistor

This page provides the datasheet information for the BD138, a member of the BD136 Silicon PNP Transistor family.

Features

. Designed for Complementary Use with BD135, BD137 and BD139 7.9 MAX. Unit in mm.

Toshiba

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Datasheet Details

Part number	BD138
Manufacturer	Toshiba
File Size	104.92 KB
Description	Silicon PNP Transistor
Datasheet	BD138 Datasheet
Additional preview pages of the BD138 datasheet.

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Other Datasheets by Toshiba

BD135 - Silicon NPN Transistor
BD136 - SILICON PNP Transistor
BD137 - Silicon NPN Transistor
BD139 - Silicon NPN Transistor
BD140 - Silicon PNP Transistor
BD140 - SILICON PNP Transistor

Full PDF Text Transcription

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BD136 BD138 IBD140I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD135, BD137 and BD139 7.9 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage BD136 BD138 BD140 VCBO Collector-Emitter Voltage BD136 BD138 BD140 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25°C Tc^60°C VcEO VEBO ic ICM Junction Temperature Storage Temperature Range L stg RATING -45 -60 -80 -45 -60 -80 -5 -0.5 -1.5 6.5 150 -55-150 UNIT 1. EMITTER 2. COLLECTOR (HEAT SINK) Z. BASE TO— 126 TOSHIBA Weight : 0.72g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.

Published: Jul 16, 2018 |