BD136 - SILICON PNP Transistor

Features

. Designed for Complementary Use with BD135, BD137 and BD139 7.9 MAX. Unit in mm.

Toshiba

Datasheet Details

Part number	BD136
Manufacturer	Toshiba
File Size	104.92 KB
Description	SILICON PNP Transistor
Datasheet	BD136 Datasheet
Additional preview pages of the BD136 datasheet.

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Other Datasheets by Toshiba

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Full PDF Text Transcription

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BD136 BD138 IBD140I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD135, BD137 and BD139 7.9 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage BD136 BD138 BD140 VCBO Collector-Emitter Voltage BD136 BD138 BD140 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25°C Tc^60°C VcEO VEBO ic ICM Junction Temperature Storage Temperature Range L stg RATING -45 -60 -80 -45 -60 -80 -5 -0.5 -1.5 6.5 150 -55-150 UNIT 1. EMITTER 2. COLLECTOR (HEAT SINK) Z. BASE TO— 126 TOSHIBA Weight : 0.72g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.

Published: Aug 12, 2024 |