BD139 - Silicon NPN Transistor

This page provides the datasheet information for the BD139, a member of the BD135 Silicon NPN Transistor family.

Features

. Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm.

Toshiba

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Datasheet Details

Part number	BD139
Manufacturer	Toshiba
File Size	101.44 KB
Description	Silicon NPN Transistor
Datasheet	BD139 Datasheet
Additional preview pages of the BD139 datasheet.

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Other Datasheets by Toshiba

BD135 - Silicon NPN Transistor
BD136 - SILICON PNP Transistor
BD137 - Silicon NPN Transistor
BD138 - Silicon PNP Transistor
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BD140 - SILICON PNP Transistor

Full PDF Text Transcription

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25 C Tc^60 C Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO Vebo I CM RATING 45 60 80 45 60 80 0.5 1.5 PC L stg 6.5 150 -55-150 UNIT 1. EMITTER Z. COLLECTOR (HEAT S INK) Z. BASE TO— 126 TOSHIBA 2-8P1A Weight : 0.

Published: Jul 16, 2018 |