Datasheet4U Logo Datasheet4U.com

BD117 NPN Transistor

BD117 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD117 .
Excellent Safe Operating Area. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Collector-Emitter Saturation Voltage- : VCE(sat.

BD117 Applications

* Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Colle

📥 Download Datasheet

Preview of BD117 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BD117
Manufacturer
INCHANGE
File Size
189.03 KB
Datasheet
BD117-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • BD115 - Small Signal Transistors (Central Semiconductor)
  • BD11600NUX - USB Switch (ROHM)
  • BD11670GWL - USB Switch (ROHM)
  • BD101 - RECTIFIER DIODE (Sinyork)
  • BD101W - RECTIFIER DIODE (Sinyork)
  • BD101WS - RECTIFIER DIODE (Sinyork)
  • BD1020HFV - Temperature Sensor (Rohm)
  • BD1040S - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (Pan Jit International)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE BD117-like datasheet