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BD117 - NPN Transistor

Description

Excellent Safe Operating Area Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 3A Good Linearity of hFE

and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD117 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 3A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
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