CS1N80A4H Datasheet - Huajing Microelectronics

CS1N80A4H Silicon N-Channel Power MOSFET

CS1N80 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit f.

CS1N80A4H Features

* l Fast Switching 800 1 30 12 l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:6.7nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）：

CS1N80A4H Datasheet (523.10 KB)