Datasheet Details
| Part number | CS1N60A4H |
|---|---|
| Manufacturer | CR Micro |
| File Size | 417.31 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
 CS1N60A4H-CRMicro.pdf
|
| Part number | CS1N60A4H |
|---|---|
| Manufacturer | CR Micro |
| File Size | 417.31 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
CS1N60A4H-CRMicro.pdf
|
VDSS 600 V CS1N60 A4H, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W which reduce the conduction loss, improve switching RDS(ON)Typ 11 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-252, which accords with the RoHS standard.
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