CS1N60B3R Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS1N60B3R, Silicon N-Channel Power MOSFET

CS1N60 B3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.5 32 7 performance and enhance the avalanche energy.

The transistor can be used in various power switc

CS1N60B3R Features

* l Fast Switching l Low ON Resistance(Rdson≤8Ω) l Low Gate Charge (Typical Data:5.2nC) l Low Reverse transfer capacitances(Typical:2pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter