CS1N60A23H - Silicon N-Channel Power MOSFET

CR Micro

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Datasheet Details

Part number	CS1N60A23H
Manufacturer	CR Micro
File Size	514.92 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS1N60A23H-CRMicro.pdf

CS1N60A23H Product details

Description

VDSS 600 CS1N60 A23H, the silicon N-channel Enhanced ID 0.8 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 which reduce the conduction loss, improve switching RDS(ON)Typ 11 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is SOT-223, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 9, 2024 |