Datasheet Details
| Part number | CS1N60C3H |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 529.98 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
|
| Part number | CS1N60C3H |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 529.98 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
|
CS1N60 C3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.0 30 8 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.
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