CS1N60C1HD - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS1N60C1HD
Manufacturer	Huajing Microelectronics
File Size	815.25 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS1N60C1HD-HuajingMicroelectronics.pdf

CS1N60C1HD Product details

Description

CS1N60C1HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.5 3 7.0 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-92, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:7.5nC) l Low Reverse transfer capacitances(Typical:5.0pF) l 100% Single Pulse avalanche energy Test.

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Published: Jan 30, 2019 |