CS1N60B1R - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS1N60B1R
Manufacturer	Huajing Microelectronics
File Size	0.98 MB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS1N60B1R-HuajingMicroelectronics.pdf

CS1N60B1R Product details

Description

CS1N60 B1R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.5 3 7 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-92, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤8Ω) l Low Gate Charge (Typical Data:5.2nC) l Low Reverse transfer capacitances(Typical:2pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |