CS1N80A3H - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS1N80A3H
Manufacturer	Huajing Microelectronics
File Size	409.94 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS1N80A3H-HuajingMicroelectronics.pdf

CS1N80A3H Product details

Description

CS1N80 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 800 1 30 12 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:6.7nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |