2SD2300 - Silicon NPN Transistor

Hitachi Semiconductor

Datasheet Details

Part number	2SD2300
Manufacturer	Hitachi Semiconductor
File Size	32.07 KB
Description	Silicon NPN Transistor
Datasheet	2SD2300_HitachiSemiconductor.pdf

High breakdown voltage VCBO = 1500 V.
Built-in damper diode type Outline TO-3PFM 2 1. Base 2. Collector 3. Emitter 1 ID 1 2 3 3 2SD2300 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCES VEBO IC IC(peak) IC(surge) PC.
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Published: Apr 3, 2005 |