2SD2318 - High-current gain Power Transistor

Datasheet Details

Part number	2SD2318
Manufacturer	ROHM
File Size	94.02 KB
Description	High-current gain Power Transistor
Datasheet	2SD2318_Rohm.pdf

1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A).
Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Single pulse PW=100ms Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 80 60 6 3 4.5 1 15 150.
55 to +150 Unit V V V A A(Pulse) ∗ W W(TC=25°C) °C °C.
Packaging specifications and hFE.

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Published: Apr 3, 2005 |