q q
0.7±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
(Ta=25˚C)
Ratings 40 20 7 5 8 400 150.
55 ~ +150 Unit V V V A A mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.54±0.15
EIAJ:SC.
72 New S Type Package
s Electrical Characteristics
Parameter.
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Transistor
2SD2321
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
4.0±0.2
s Features
q q
0.7±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
(Ta=25˚C)
Ratings 40 20 7 5 8 400 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.54±0.
2SD2321 Datasheet
