Datasheet4U Logo Datasheet4U.com

GT55N06, GT55N06D5 - N-Channel Enhancement Mode Power MOSFET

GT55N06 Description

GT55N06D5 N-Channel Enhancement Mode Power MOSFET .
The GT55N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: GT55N06, GT55N06D5. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
GT55N06, GT55N06D5
Manufacturer
GOFORD
File Size
691.20 KB
Datasheet
GT55N06D5-GOFORD.pdf
Description
N-Channel Enhancement Mode Power MOSFET
Note
This datasheet PDF includes multiple part numbers: GT55N06, GT55N06D5.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • GT50G102 - Insulated Gate Bipolar Transistor (ETC)
  • GT50G321 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J101 - TRANSISTOR IGBT (Toshiba)
  • GT50J102 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J121 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J122 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J123 - Silicon N-Channel IGBT (Toshiba)
  • GT50J301 - silicon N-channel IGBT (Toshiba Semiconductor)

📌 All Tags

N-Channel Enhancement Mode Power MOSFET GOFORD
GOFORD GT55N06-like datasheet

GT55N06 Stock/Price