GT52N10, GT52N10D5 N-Channel Enhancement Mode Power MOSFET

Description

GOFORD GT52N10D5 N-Channel Enhancement Mode Power MOSFET .
The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

📥 Download Datasheet

GT52N10 Datasheet Preview — This datasheet PDF includes multiple part numbers: GT52N10, GT52N10D5. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: GT52N10, GT52N10D5
Manufacturer: GOFORD
File Size: 866.21 KB
Datasheet: GT52N10D5-GOFORD.pdf
Description: N-Channel Enhancement Mode Power MOSFET
Note: This datasheet PDF includes multiple part numbers: GT52N10, GT52N10D5.
Please refer to the document for exact specifications by model.

Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V) 100V 71A < 7.5mΩ
* RDS(ON) (at VGS = 4.5V) < 10mΩ
* 100% Avalanche Tested

GT52N10 Distributors

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📌 All Tags

GT52N10D5 N-Channel Enhancement Mode Power MOSFET GOFORD

GOFORD GT52N10-like datasheet