Datasheet4U Logo Datasheet4U.com

GT52N10T - N-Channel Enhancement Mode Power MOSFET

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 70A < 9mΩ < 15mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

📥 Download Datasheet

Datasheet Details

Part number GT52N10T
Manufacturer GOFORD
File Size 0.96 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT52N10T Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GT50G102 Insulated Gate Bipolar Transistor ETC
GT50G321 silicon N-channel IGBT Toshiba Semiconductor
GT50J101 TRANSISTOR IGBT Toshiba
GT50J102 silicon N-channel IGBT Toshiba Semiconductor
GT50J121 silicon N-channel IGBT Toshiba Semiconductor

Other Datasheets by GOFORD

Part Number Description
GT52N10 N-Channel Enhancement Mode Power MOSFET
GT52N10 TO-220 N-Channel Enhancement Mode Power MOSFET
GT52N10D5 N-Channel Enhancement Mode Power MOSFET
GT55N06 N-Channel Enhancement Mode Power MOSFET
GT55N06D5 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GT52N10T N-Channel Enhancement Mode Power MOSFET Description The GT52N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.
Published: |