GT52N10D5 Datasheet Text
GOFORD
GT52N10D5
N-Channel Enhancement Mode Power MOSFET
Description
The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features
- VDS
- ID (at VGS = 10V)
- RDS(ON) (at VGS = 10V)
100V 71A < 7.5mΩ
- RDS(ON) (at VGS = 4.5V) < 10mΩ
- 100% Avalanche Tested
- RoHS pliant
Application
- Power switch
- DC/DC converters
- Synchronous Rectification
Schematic diagram GT52N10
Marking and pin assignment
Device GT52N10D5
Package DFN5- 6
Marking GT52N10
DFN5- 6
Packaging...