Datasheet4U.com

IGT6D20 - Insulated Gate Bipolar Transistor

GE

📥 Download Datasheet

IGT6D20 Datasheet Preview — Preview of IGT6D20 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IGT6D20
Manufacturer	GE
File Size	294.88 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT6D20-GE.pdf

IGT6D20 Product details

Features

Low VCE(SAT) - 2.3V typ @ 20A " Ultra-fast turn-on - 200 ns typical.
Polysilicon MOS gate - Voltage controlled turn on/off e High current handling - 20 amps @ 100°C N-.

📁 IGT6D20 Similar Datasheet

IGT60R042D1 - Power Transistor (Infineon)
IGT60R070D1 - 600V enhancement-mode Power Transistor (Infineon)
IGT60R190D1 - Power Transistor (Infineon)
IGT60R190D1S - 600V enhancement-mode Power Transistor (Infineon)
IGT65R025D2 - 650V Transistor (Infineon)
IGT65R035D2 - 650V Transistor (Infineon)
IGT65R045D2 - 650V Transistor (Infineon)
IGT65R055D2 - 650V Transistor (Infineon)

Other Datasheets by GE

IGT6D21 - Insulated Gate Bipolar Transistor
IGT6D10 - Insulated Gate Bipolar Transistor
IGT6D11 - Insulated Gate Bipolar Transistor
IGT6E10 - Insulated Gate Bipolar Transistor
IGT6E11 - Insulated Gate Bipolar Transistor
IGT6E20 - Insulated Gate Bipolar Transistor

Published: Feb 11, 2019 |