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IGT6E20, IGT6D20 - Insulated Gate Bipolar Transistor

GE

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IGT6E20 Datasheet Preview — This datasheet PDF includes multiple part numbers: IGT6E20, IGT6D20. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	IGT6E20, IGT6D20
Manufacturer	GE
File Size	294.88 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT6D20-GE.pdf
Note	This datasheet PDF includes multiple part numbers: IGT6E20, IGT6D20. Please refer to the document for exact specifications by model.

IGT6E20 Product details

Features

Low VCE(SAT) - 2.3V typ @ 20A " Ultra-fast turn-on - 200 ns typical.
Polysilicon MOS gate - Voltage controlled turn on/off e High current handling - 20 amps @ 100°C N-.

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Other Datasheets by GE

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IGT6D20 - Insulated Gate Bipolar Transistor

Published: Feb 11, 2019 |