Datasheet4U.com

IGT6D11 - Insulated Gate Bipolar Transistor

GE

📥 Download Datasheet

IGT6D11 Datasheet Preview — Preview of IGT6D11 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IGT6D11
Manufacturer	GE
File Size	289.09 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT6D11-GE.pdf

IGT6D11 Product details

Features

Low VCE(SAT) - 2.5V typ @ 10A.
Ultra-fast turn-on -100 ns typical.
Polysilicon MOS gate - Voltage controlled turn on/off.
High current handling - 10 amps @ 100°C N-.

📁 IGT6D11 Similar Datasheet

IGT60R042D1 - Power Transistor (Infineon)
IGT60R070D1 - 600V enhancement-mode Power Transistor (Infineon)
IGT60R190D1 - Power Transistor (Infineon)
IGT60R190D1S - 600V enhancement-mode Power Transistor (Infineon)
IGT65R025D2 - 650V Transistor (Infineon)
IGT65R035D2 - 650V Transistor (Infineon)
IGT65R045D2 - 650V Transistor (Infineon)
IGT65R055D2 - 650V Transistor (Infineon)

Other Datasheets by GE

IGT6D10 - Insulated Gate Bipolar Transistor
IGT6D20 - Insulated Gate Bipolar Transistor
IGT6D21 - Insulated Gate Bipolar Transistor
IGT6E10 - Insulated Gate Bipolar Transistor
IGT6E11 - Insulated Gate Bipolar Transistor
IGT6E20 - Insulated Gate Bipolar Transistor

Published: Feb 11, 2019 |