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IGT6D21 - Insulated Gate Bipolar Transistor

GE

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Datasheet Details

Part number	IGT6D21
Manufacturer	GE
File Size	280.29 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT6D21-GE.pdf

IGT6D21 Product details

Features

Low VCE(SAT) - 2.5Vtyp@20A.
Ultra-fast turn-on -150 ns typical.
Polysilicon MOS gate - Voltage controlled turn on/off.
High current handling - 20 amps @ 900 C N-CHANNEl c o~ E CASE STYLE TO-204AA (TO-3).

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Published: Feb 11, 2019 |