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IGT6D10 - Insulated Gate Bipolar Transistor

GE

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Datasheet Details

Part number	IGT6D10
Manufacturer	GE
File Size	291.90 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT6D10-GE.pdf

IGT6D10 Product details

Features

Low VCE(SAT) - 2.5V typ @ 10A.
Ultra-fast turn-on - 150 ns typical.
Polysilicon MOS gate - Voltage controlled turn onloff.
High current handling -10 amps @ 100°C N-.

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Published: Feb 11, 2019 |