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IGT6E11, IGT6D11 - Insulated Gate Bipolar Transistor

GE

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IGT6E11 Datasheet Preview — This datasheet PDF includes multiple part numbers: IGT6E11, IGT6D11. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	IGT6E11, IGT6D11
Manufacturer	GE
File Size	289.09 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT6D11-GE.pdf
Note	This datasheet PDF includes multiple part numbers: IGT6E11, IGT6D11. Please refer to the document for exact specifications by model.

IGT6E11 Product details

Features

Low VCE(SAT) - 2.5V typ @ 10A.
Ultra-fast turn-on -100 ns typical.
Polysilicon MOS gate - Voltage controlled turn on/off.
High current handling - 10 amps @ 100°C N-.

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Other Datasheets by GE

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Published: Feb 11, 2019 |