Datasheet Details
Part number:
IGT6E10, IGT6D10
Manufacturer:
GE
File Size:
291.90 KB
Description:
Insulated gate bipolar transistor.
Note:
This datasheet PDF includes multiple part numbers: IGT6E10, IGT6D10.
Please refer to the document for exact specifications by model.
IGT6E10, IGT6D10, Insulated Gate Bipolar Transistor
mTMlJ~~~ Insulated Gate Bipolar Transistor Preliminary 26.4 4/85 IGT6D10,E10 10 AMPERES 400, 500 VOLTS EQUIV.
RDS(ON) = 0.27 n This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS gate turn onloff power switching device combining the best advantages of power MOSFETS and bipolar transistors.
The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors.
The device design and gate character
IGT6E10 Features
* Low VCE(SAT) - 2.5V typ @ 10A
* Ultra-fast turn-on - 150 ns typical
* Polysilicon MOS gate - Voltage controlled turn onloff
* High current handling -10 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) ~~~
* -
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