Datasheet4U.com

IGT6E10, IGT6D10 - Insulated Gate Bipolar Transistor

GE

📥 Download Datasheet

IGT6E10 Datasheet Preview — This datasheet PDF includes multiple part numbers: IGT6E10, IGT6D10. Please refer to the document for exact specifications by model.

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IGT6E10, IGT6D10
Manufacturer	GE
File Size	291.90 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT6D10-GE.pdf
Note	This datasheet PDF includes multiple part numbers: IGT6E10, IGT6D10. Please refer to the document for exact specifications by model.

IGT6E10 Product details

Features

Low VCE(SAT) - 2.5V typ @ 10A.
Ultra-fast turn-on - 150 ns typical.
Polysilicon MOS gate - Voltage controlled turn onloff.
High current handling -10 amps @ 100°C N-.

📁 IGT6E10 Similar Datasheet

IGT60R042D1 - Power Transistor (Infineon)
IGT60R070D1 - 600V enhancement-mode Power Transistor (Infineon)
IGT60R190D1 - Power Transistor (Infineon)
IGT60R190D1S - 600V enhancement-mode Power Transistor (Infineon)
IGT65R025D2 - 650V Transistor (Infineon)
IGT65R035D2 - 650V Transistor (Infineon)
IGT65R045D2 - 650V Transistor (Infineon)
IGT65R055D2 - 650V Transistor (Infineon)

Other Datasheets by GE

IGT6E11 - Insulated Gate Bipolar Transistor
IGT6E20 - Insulated Gate Bipolar Transistor
IGT6E21 - Insulated Gate Bipolar Transistor
IGT6D10 - Insulated Gate Bipolar Transistor
IGT6D11 - Insulated Gate Bipolar Transistor
IGT6D20 - Insulated Gate Bipolar Transistor

Published: Feb 11, 2019 |