LP7612P70 PACKAGED HIGH DYNAMIC RANGE PHEMT

Filtronic Compound Semiconductors

Description

PACKAGED HIGH DYNAMIC RANGE PHEMT * .
AND APPLICATIONS The LP7612P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility.

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Datasheet Specifications

Part number: LP7612P70
Manufacturer: Filtronic Compound Semiconductors
File Size: 61.51 KB
Datasheet: LP7612P70_FiltronicCompoundSemiconductors.pdf
Description: PACKAGED HIGH DYNAMIC RANGE PHEMT

Features

* 20 dBm Output Power at 1-dB Compression at 18 GHz
* 7.5 dB Power Gain at 18 GHz
* 16 dB Small Signal Gain at 2 GHz
* 0.8 dB Noise Figure at 2 GHz LP7612P70

Applications

* The LP7612P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasi

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LP7612P70 PACKAGED HIGH DYNAMIC RANGE PHEMT Filtronic Compound Semiconductors

Filtronic Compound Semiconductors LP7612P70-like datasheet