LP7612 HIGH DYNAMIC RANGE PHEMT

Filtronic Compound Semiconductors

Description

HIGH DYNAMIC RANGE PHEMT * .
AND APPLICATIONS The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor.

📥 Download Datasheet

LP7612 Datasheet Preview — Preview of LP7612 PDF

Datasheet Specifications

Part number: LP7612
Manufacturer: Filtronic Compound Semiconductors
File Size: 39.36 KB
Datasheet: LP7612_FiltronicCompoundSemiconductors.pdf
Description: HIGH DYNAMIC RANGE PHEMT

Features

* 21 dBm Output Power at 1-dB Compression at 18 GHz
* 9.5 dB Power Gain at 18 GHz
* 1.0 dB Noise Figure at 18 GHz
* 55% Power-Added Efficiency DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7612 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE THICKNESS: 3.9

Applications

* The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and

LP7612 Distributors

📁 Related Datasheet

LP7618B LP701 LP702 LP7100B LP721 LP722

📌 All Tags

LP7612 HIGH DYNAMIC RANGE PHEMT Filtronic Compound Semiconductors

Filtronic Compound Semiconductors LP7612-like datasheet