LP750SOT89 LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

Filtronic Compound Semiconductors

Description

LP750SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT * .
AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility.

📥 Download Datasheet

LP750SOT89 Datasheet Preview — Preview of LP750SOT89 PDF

Datasheet Specifications

Part number: LP750SOT89
Manufacturer: Filtronic Compound Semiconductors
File Size: 43.90 KB
Datasheet: LP750SOT89_FiltronicCompoundSemiconductors.pdf
Description: LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

Features

* 26 dBm Output Power at 1-dB Compression at 1.8 GHz
* 17 dB Power Gain at 1.8 GHz
* 0.7 dB Noise Figure
* 40 dBm Output IP3 at 1.8 GHz
* 55% Power-Added Efficiency

Applications

* The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes

LP750SOT89 Distributors

📁 Related Datasheet

LP7510 LP75103122F LP7568130F LP75W-108 LP75W-108-C0700 LP75W-12

📌 All Tags

LP750SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT Filtronic Compound Semiconductors

Filtronic Compound Semiconductors LP750SOT89-like datasheet