LP7512P70 PACKAGED ULTRA LOW NOISE PHEMT

Filtronic Compound Semiconductors

LP7512P70 Description

PACKAGED ULTRA LOW NOISE PHEMT * .
AND APPLICATIONS The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility.

LP7512P70 Features

* 0.7 dB Noise Figure at 12 GHz
* 12 dB Associated Gain at 12 GHz
* 0.4 dB Noise Figure at 2 GHz
* 18 dB Associated Gain at 2 GHz
* Low DC Power Consumption: 30mW LP7512P70

LP7512P70 Applications

* The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasi

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LP7512P70 Datasheet Preview — Preview of LP7512P70 PDF

Datasheet Details

Part number: LP7512P70
Manufacturer: Filtronic Compound Semiconductors
File Size: 59.88 KB
Datasheet: LP7512P70_FiltronicCompoundSemiconductors.pdf
Description: PACKAGED ULTRA LOW NOISE PHEMT

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PACKAGED ULTRA LOW NOISE PHEMT Filtronic Compound Semiconductors

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