LP750P100 PACKAGED 0.5 WATT POWER PHEMT

Filtronic Compound Semiconductors

LP750P100 Description

LP750P100 PACKAGED 0.5 WATT POWER PHEMT * .
AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Tr.

LP750P100 Applications

* The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and ga

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Datasheet Details

Part number: LP750P100
Manufacturer: Filtronic Compound Semiconductors
File Size: 49.27 KB
Datasheet: LP750P100_FiltronicCompoundSemiconductors.pdf
Description: PACKAGED 0.5 WATT POWER PHEMT

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PACKAGED 0.5 WATT POWER PHEMT Filtronic Compound Semiconductors

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