LP750 0.5 W POWER PHEMT

Filtronic Compound Semiconductors

Description

0.5 W POWER PHEMT * .
AND APPLICATIONS The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (.

📥 Download Datasheet

LP750 Datasheet Preview — Preview of LP750 PDF

Datasheet Specifications

Part number: LP750
Manufacturer: Filtronic Compound Semiconductors
File Size: 34.36 KB
Datasheet: LP750_FiltronicCompoundSemiconductors.pdf
Description: 0.5 W POWER PHEMT

Features

* 28 dBm Output Power at 1-dB Compression at 18 GHz
* 10 dB Power Gain at 18 GHz
* 24 dBm Output Power at 1-dB Compression at 3.3V
* 55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD (2x) GATE BOND PAD LP750

Applications

* The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 750 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate

LP750 Distributors

📁 Related Datasheet

LP7510 LP75103122F LP7568130F LP75W-108 LP75W-108-C0700 LP75W-12

📌 All Tags

LP750 0.5 POWER PHEMT Filtronic Compound Semiconductors

Filtronic Compound Semiconductors LP750-like datasheet