Datasheet4U Logo Datasheet4U.com

LP722 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

📥 Download Datasheet  Datasheet Preview Page 1

Description

polyfet rf devices LP722 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

📥 Download Datasheet

Preview of LP722 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
LP722
Manufacturer
Polyfet RF Devices
File Size
35.74 KB
Datasheet
LP722_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 35.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

LP722 Distributors

📁 Related Datasheet

📌 All Tags

Polyfet RF Devices LP722-like datasheet