Description
This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- -4.5 A, -20 V. R DS(ON) = 0.045
R DS(ON) = 0.065
Ω @ VGS = -4.5 V Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low R DS(ON). SuperSOT -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). TM
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
S D D
1
6
.63
pin 1
8
2
G D D
5
SuperSOT
TM
-6
3
4
Absolute Maximum Ratings Symbol Parameter
VDSS VGSS ID Drain-Source Voltage
TA = 25°C unless ot.
FDC638P_FairchildSemiconductor.pdf
