FDC638APZ Datasheet (Fairchild Semiconductor)

FDC638APZ, N-Channel MOSFET

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well suited for battery power app

FDC638APZ Features

* Max rDS(on) = 43mΩ at VGS =

* 4.5V, ID =

* 4.5A

* Max rDS(on) = 68mΩ at VGS =

* 2.5V, ID =

* 3.8A

* Low gate charge (8nC typical).

* High performance trench technology for extremely low rDS(on).

* SuperSOTTM

* 6 package:sma