FDC6301N - Dual N-Channel Digital FET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDC6301N
Manufacturer	ON Semiconductor
File Size	315.50 KB
Description	Dual N-Channel Digital FET
Datasheet	FDC6301N Datasheet
Additional preview pages of the FDC6301N datasheet.

Product details

Description

These dual N Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on state resistance. Channel FET’s can replace several digital transistors, with a variety of bias

Features

25 V, 0.22 A Continuous, 0.5 A Peak.
RDS(on) = 5 W @ VGS = 2.7 V.
RDS(on) = 4 W @ VGS = 4.5 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V.
Gate.
Source Zener for ESD Ruggedness. >6 kV Human Body Model.
This is a Pb.
Free and Halide Free Device DATA SHEET www. onsemi. com D2 S1 D1 G2 G1S2 TSOT23 6.
Lead SUPERSOTt.
6 CASE 419BL.

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Published: Dec 12, 2021 |