FDC638P - P-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDC638P
Manufacturer	ON Semiconductor
File Size	307.71 KB
Description	P-Channel MOSFET
Datasheet	FDC638P Datasheet
Additional preview pages of the FDC638P datasheet.

Product details

Description

This P Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

Features

4.5 A,.
20 V.
RDS(on) = 48 mW @ VGS =.
4.5 V.
RDS(on) = 65 mW @ VGS =.
2.5 V.
Low Gate Charge (10 nC Typical).
High Performance Trench Technology for Extremely Low RDS(on).
SUPERSOTt.
6 Package: Small Footprint (72% Smaller than Standard SO.
8); Low Profile (1 mm Thick).
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

📁 Similar Datasheet

FDC638P - P-Channel MOSFET (Fairchild Semiconductor)
FDC638APZ - N-Channel MOSFET (Fairchild Semiconductor)
FDC6301N - Dual N-Channel / Digital FET (Fairchild Semiconductor)
FDC6302P - Digital FET/ Dual P-Channel (Fairchild Semiconductor)
FDC6303N - Dual N-Channel Digital FET (Fairchild Semiconductor)
FDC6303N - Dual N-Channel Digital FET (onsemi)
FDC6304P - Digital FET/ Dual P-Channel (Fairchild Semiconductor)
FDC6305N - Dual N-Channel MOSFET (Fairchild Semiconductor)

Other Datasheets by ON Semiconductor

FDC638APZ - P-Channel MOSFET
FDC6301N - Dual N-Channel Digital FET
FDC6302P - Dual P-Channel MOSFET
FDC6304P - Dual P-Channel MOSFET
FDC6305N - Dual N-Channel MOSFET
FDC6310P - Dual P-Channel MOSFET

Published: Dec 12, 2021 |