AS4C256K16E0 5V 256K x 16 CMOS DRAM

Alliance Semiconductor

Description

AS4C256K16E0 ® 5V 256K×16 CMOS DRAM (EDO) .
40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 NC LCAS UCAS OE A8 A7 A6 A5 A4 GND.

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Datasheet Specifications

Part number: AS4C256K16E0
Manufacturer: Alliance Semiconductor
File Size: 657.60 KB
Datasheet: AS4C256K16E0_AllianceSemiconductor.pdf
Description: 5V 256K x 16 CMOS DRAM

Features

* Organization: 262,144 words × 16 bits
* High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/10/10 ns CAS access time
* Low power consumption - Active: 500 mW max (AS4C256K16E0-25) - Standby: 3.6 mW max, CMOS I/O (AS4C256K16E0-25)

AS4C256K16E0 Distributors

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AS4C256K16E0 256K CMOS DRAM Alliance Semiconductor

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