AS4C1M16S-I, AS4C1M16S-C Datasheet - Alliance Memory

AS4C1M16S-I 1M x 16 bit Synchronous DRAM

Symbol CLK Type Input CKE Input A11 A0-A10 Input Input CS# Input RAS# Input CAS# Input WE# Input LDQM, UDQM Input AS4C1M16S-C&I Table 3. Pin Details Description Clock: CLK is driven by the system clock. All SDRAM input signals are sampled on the positive edge of CLK. CLK also increm.

AS4C1M16S-I Features

* Fast access time: 5.4/5.4ns

* Fast clock rate: 166/143 MHz

* Self refresh mode: standard

* Internal pipelined architecture

* 512K word x 16-bit x 2-bank

* Programmable Mode registers - CAS Latency: 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or

AS4C1M16S-C-AllianceMemory.pdf

AS4C1M16S-I Datasheet Preview — This datasheet PDF includes multiple part numbers: AS4C1M16S-I, AS4C1M16S-C. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AS4C1M16S-I, AS4C1M16S-C

Manufacturer:

Alliance Memory

File Size:

923.41 KB

Description:

1m x 16 bit synchronous dram.

Note:

This datasheet PDF includes multiple part numbers: AS4C1M16S-I, AS4C1M16S-C.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

AS4C1M16S-C 1M x 16 bit Synchronous DRAM (Alliance Memory)

AS4C1M16S 1M x 16 bit Synchronous DRAM (Alliance Memory)

AS4C1M16E5 5V 1M x 16 CMOS DRAM (Alliance Semiconductor)

AS4C1M16F5 5V 1M x 16 CMOS DRAM (Alliance Semiconductor)

AS4C1024 1M x 1 DRAM (Austin Semiconductor)

AS4C1259 256K x 1 DRAM (Austin Semiconductor)

AS4C1259883C 256K x 1 DRAM (Austin Semiconductor)

AS4C128M16D2A-25BCN 2Gb DDR2 (Alliance Semiconductor)

TAGS

AS4C1M16S-I AS4C1M16S-C bit Synchronous DRAM Alliance Memory

AS4C1M16S-I Distributor