AS4C1M16F5 - 5V 1M x 16 CMOS DRAM

Alliance Semiconductor

📥 Download Datasheet

AS4C1M16F5 Datasheet Preview — Preview of AS4C1M16F5 PDF

Datasheet Details

Part number	AS4C1M16F5
Manufacturer	Alliance Semiconductor
File Size	633.55 KB
Description	5V 1M x 16 CMOS DRAM
Datasheet	AS4C1M16F5_AllianceSemiconductor.pdf

AS4C1M16F5 Product details

Description

42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 VSS DQ16 DQ15 DQ14 DQ13 VSS DQ12 DQ11 DQ10 DQ9 NC LCAS UCAS OE A9 A8 A7 A6 A5 VCC DQ1 DQ2 DQ3 DQ4 VCC DQ5 DQ6 DQ7 DQ8 NC 1 2 3 4 5 6 7 8 9 10 11 50 49 48 47 46 45 44 43 42 41 40 VSS DQ16 DQ15 DQ14 DQ13 VSS DQ12 DQ11 DQ10 DQ9 NC A0 to A9 Address inputs Input/output Row address strobe Output enable Write enable DQ1 to DQ16 OE WE UCAS LCAS Column address strobe, upper byte Column address strobe, lower byte Power Groun

Features

Organization: 1,048,576 words × 16 bits.
High speed - 45/50/60 ns RAS access time - 20/20/25 ns fast page cycle time - 10/12/15 ns CAS access time.
Low power consumption - Active: 880 mW max (AS4C1M16F5-60) - Standby: 11 mW max, CMOS DQ.
Fast page mode.
1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh.
Read-modify-write.
TTL-compatible, three-state DQ.
JEDEC standard package and pinout - 400.

📁 AS4C1M16F5 Similar Datasheet

AS4C1M16S - 1M x 16 bit Synchronous DRAM (Alliance Memory)
AS4C1M16S-C - 1M x 16 bit Synchronous DRAM (Alliance Memory)
AS4C1M16S-I - 1M x 16 bit Synchronous DRAM (Alliance Memory)
AS4C1024 - 1M x 1 DRAM (Austin Semiconductor)
AS4C1259 - 256K x 1 DRAM (Austin Semiconductor)
AS4C1259883C - 256K x 1 DRAM (Austin Semiconductor)
AS4C4067 - 64K x 4 DRAM (Austin Semiconductor)
AS4C4256 - (Austin Semiconductor)

Other Datasheets by Alliance Semiconductor

AS4C1M16E5 - 5V 1M x 16 CMOS DRAM
AS4C128M16D2A-25BCN - 2Gb DDR2
AS4C128M16D2A-25BIN - 2Gb DDR2
AS4C128M16D3A-12BIN - 2Gb Double-Data-Rate-3 DRAM
AS4C128M16D3B-12BCN - Double-data-rate architecture
AS4C128M16D3C-93BCN - 128M x 16 bit DDR3 Synchronous DRAM

Published: Mar 5, 2006 |