AP20G45EH N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP20G45EH/J Advanced Power Electronics Corp.N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR .
High Input Impedance. High Pick Current Capability. 4. Strobe Flash Applications G C E TO-252(H) G C E TO-251(J).

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Datasheet Specifications

Part number: AP20G45EH
Manufacturer: Advanced Power Electronics
File Size: 69.78 KB
Datasheet: AP20G45EH-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* G C E TO-252(H) G C E TO-251(J) VCES ICP G Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGE Gate-Emitter Voltage IGEP Pulsed Gate-Emitter Voltage ICP PD@TC=25℃ Pulsed Collector Current Maximum Power Dissipation TSTG Storage Temperature Range TJ Operating J

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AP20G45EH N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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