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AP20G02BDF 20V N+P-Channel Enhancement Mode MOSFET

AP20G02BDF Description

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AP20G02BDF 20V N+P-Channel Enhancement Mode MOSFET The AP20G02BDF uses advanced Trench III technology to provide excellent RDS(ON), low gate charge.

AP20G02BDF Features

* VDS = 20V ID =20A RDS(ON)

AP20G02BDF Applications

* , should be limited by total power dissipation. 2 AP20G02BDF REV1.1 AP20G02BDF 20V N+P-Channel Enhancement Mode MOSFET P-Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V, ID= -250μA

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Datasheet Details

Part number
AP20G02BDF
Manufacturer
APM
File Size
1.35 MB
Datasheet
AP20G02BDF-APM.pdf
Description
20V N+P-Channel Enhancement Mode MOSFET

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20V N +P-Channel Enhancement Mode MOSFET APM
APM AP20G02BDF-like datasheet