AP20G02BDF 20V N+P-Channel Enhancement Mode MOSFET

APM

Description

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AP20G02BDF 20V N+P-Channel Enhancement Mode MOSFET The AP20G02BDF uses advanced Trench III technology to provide excellent RDS(ON), low gate charge.

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Datasheet Specifications

Part number: AP20G02BDF
Manufacturer: APM
File Size: 1.35 MB
Datasheet: AP20G02BDF-APM.pdf
Description: 20V N+P-Channel Enhancement Mode MOSFET

Features

* VDS = 20V ID =20A RDS(ON)

Applications

* , should be limited by total power dissipation. 2 AP20G02BDF REV1.1 AP20G02BDF 20V N+P-Channel Enhancement Mode MOSFET P-Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V, ID= -250μA

AP20G02BDF Distributors

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AP20G02BDF 20V N +P-Channel Enhancement Mode MOSFET APM

APM AP20G02BDF-like datasheet