AP20G04GD 40V N+P-Channel Enhancement Mode MOSFET

APM

Description

AP20G04GD 40V N+P-Channel Enhancement Mode MOSFET .
The AP20G04GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number: AP20G04GD
Manufacturer: APM
File Size: 1.83 MB
Datasheet: AP20G04GD-APM.pdf
Description: 40V N+P-Channel Enhancement Mode MOSFET

Features

* VDS = 40V ID =20A RDS(ON) < 32mΩ @ VGS=10V （Type：24mΩ） VDS = -40V ID = -18A RDS(ON)

Applications

* , should be limited by total power dissipation. 2 AP20G04GD RVE1.0 AP20G04GD 40V N+P-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperatur

AP20G04GD Distributors

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AP20G04GD 40V N +P-Channel Enhancement Mode MOSFET APM

APM AP20G04GD-like datasheet