Datasheet4U Logo Datasheet4U.com

AP20G02DF - 20V N+P-Channel Enhancement Mode MOSFET

Description

The AP20G02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 20V ID =25A RDS(ON) < 10mΩ @ VGS=4.5V （Type：8.0mΩ） VDS = -20V ID =-20A RDS(ON) < 20mΩ @ VGS=-4.5V （Type：16mΩ）.

📥 Download Datasheet

Datasheet Details

Part number AP20G02DF
Manufacturer APM
File Size 1.76 MB
Description 20V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP20G02DF Datasheet

📁 Similar Datasheet

  • AP20G45EH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
  • AP20G45EJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
  • AP20GT60ASI-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
  • AP20GT60ASP-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
  • AP20GT60I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
  • AP20GT60P-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
  • AP20GT60SW - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
  • AP20GT60W - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
  • AP200-B10 - AC Current transducer AP-B10 (LEM)
  • AP200-B420L - AC Current transducer AP-B420L (LEM)
Other Datasheets by APM
  • AP20G02BDF - 20V N+P-Channel Enhancement Mode MOSFET
  • AP20G02CDF - 20V N+P-Channel Enhancement Mode MOSFET
  • AP20G03BDF - 30V N+P-Channel Enhancement Mode MOSFET
  • AP20G04GD - 40V N+P-Channel Enhancement Mode MOSFET
  • AP20G04NF - 40V N+P-Channel Enhancement Mode MOSFET
  • AP200N03NF - 30V N-Channel Enhancement Mode MOSFET
  • AP20N02DF - 20V N-Channel Enhancement Mode MOSFET
  • AP20N02S - 20V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
Description AP20G02DF 20V N+P-Channel Enhancement Mode MOSFET The AP20G02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =25A RDS(ON) < 10mΩ @ VGS=4.5V （Type：8.0mΩ） VDS = -20V ID =-20A RDS(ON) < 20mΩ @ VGS=-4.
Published: |